Thermal Quenching of Cr(III) Luminescence

Selective excitation and thermal quenching of the yellow luminescence of GaN

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for ...

Luminescence Quenching of Rhodamines by Cyclooctatetraene

für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...

Thermal luminescence quenching of amine-functionalized silicon quantum dots: a pH and wavelength-dependent study.

Understanding and resolving the mechanisms that affect the photoluminescence (PL) of Si QDs are of great importance because of their strong potential for optoelectronic and solar cell materials. In this article, the intrinsic exciton dynamics of water-dispersed allylamine-functionalized silicon quantum dots (Si QDs) have been explored as a function of temperature by means of steady-state and ti...

Luminescence quenching in erbiumdoped hydrogenated amorphous silicon

Quenching of luminescence in semiconductors by charged defects

Charged point defects and dislocations create internal electric fields that can prevent the binding of carriers to luminescent centres such as N in Gap. This paper calculates the distribution of fields present in a semiconductor and its effect on the lifetime of an electron trapped at a localised impurity The results show a decrease in the fraction of effective luminescent centres with increasi...